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1999.12
Shanghai Comtec Semiconductor Co., Ltd. established. (SCSC)
2003.01
ComtecSemiconductorwascertifiedbyInternationalStandardsofsiliconmaterialprocess.
2004.10
ComtecSemiconductorwasawarded“CertificateforEnterpriseswithHighandNewTechnology”.
2005.06
Comtec Semiconductor rded“CertificateforForeign-fundedEnterpriseswithAdvancedTechnology.
2005.07
ShanghaiComtecSolarTechnologyCo.,Ltd.established.(SCST)
2005.08
ComtecSolarwasawardedthecertificateofhigh-techproductapplication.
2005.12
ComtecSolarwasawarded“Quality Management System Certificate for the production of silicon wafers for solar cell”.
2007.05
Comtec Semiconductor was awarded “Certificate of Utility Model Patent” for mechanical parts used in silicon process.
2007.06
Comtec Semiconductor was awarded “Certificate of Utility Model Patent” for a special fixture for silicon ingot processing.
2007.06
Comtec Solar was awarded “Certificate of Utility Model Patent” for a cropping machine for used spool wires.
2007.07
Comtec Solar Expansion Phase I is completed. New facilities and equipments have been put into operation. Our production capacity increased significantly.
2008.01
Comtec Solar Commenced Production of 170μm Solar wafers”.
2008.12
Comtec Solar was awarded “Certificate for Enterprises with High and New Technology”.
2010.10
Comtec Solar Started development of N-type Wafers,for large scale commerical production.
2011.05
Comtec Solar commenced massire production of 125μm by 125μm N-type wafers. "
2012
Comtec Solar achieved record high 24% conversion efficiency rate and reduced wafer thickness to average 150μm”.
2013
Comtec Solar reduced wafer thickness to below 150μm and improve average conversion efficiercy to 24% Comtec solar completed diawond wire qualifiation procedures with a major Japanese customers and begar shipment.”.
2014
Comtec Solar commenced pilot operation of fle rew facilities in Malays of 300MW”.

 

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